It will go up to here, take a look | Kim Rok-ho, Team Lead, Hana Securities Research Center

여기까지 올라갈 겁니다, 한번 보세요 | 김록호 하나증권 리서치센터 팀장 [더블 업]
Watch on YouTube ↗  |  February 04, 2026 at 01:29  |  18:57  |  3PRO TV (삼프로TV)
Speakers
Kim Rok-ho — Team Leader, Hana Securities Research Center

Summary

Kim Rok-ho, Team Lead at Hana Securities Research Center, discusses the sharp rally in Samsung Electronics and SK hynix and argues the memory upcycle is supported by stronger-than-expected DRAM pricing and limited supply through 1H 2027. He highlights HBM as a structural cycle-breaker and AI inference as a new driver of server DRAM demand. He gives target prices of KRW 222,000 for Samsung and KRW 1,300,000 for SK hynix, while cautioning that semiconductor equipment and materials stocks need selectivity after their recent rally.

  • Samsung Electronics and SK hynix surged, with Samsung's 11% gain described as first since 2008.
  • Memory supply is expected to remain constrained until 1H next year, supporting the upcycle through 1H 2027 if demand holds.
  • Q1 DRAM price increases are tracking stronger than the analyst's expectations.
  • HBM is viewed as structural and less cyclical because of separate customer contracts and pricing.
  • AI inference is driving exponential data growth and structural demand for server DRAM.
  • Samsung target price is KRW 222,000; SK hynix target price is KRW 1,300,000.
  • New memory capex at Samsung P4 and SK hynix M15X benefits equipment and materials, but recent broad gains create valuation risk.
  • Chinese memory expansion by CXMT and YMTC is not expected to contribute meaningful supply until after 2H 2027.
Ideas
Kim Rok-ho Team Leader, Hana Securities Research Center 3:32
Memory upcycle lasts through 1H 2027
The memory industry remains favorable because supply will not meaningfully increase until 1H next year, while Q1 DRAM price increases are already stronger than expected. If demand does not collapse dramatically, the current upcycle should be maintained smoothly through 1H 2027. HBM and AI-driven server DRAM demand are making this cycle more structural than past memory cycles.
Kim Rok-ho Team Leader, Hana Securities Research Center 4:32
HBM breaks memory cycle structurally
HBM is a structural growth item that can break the old memory cycle because it is contracted separately with customers, almost like foundry capacity, and priced on different terms than conventional DRAM. Both Samsung and SK hynix are well prepared for HBM4; SK hynix remains ahead in mass production and yield, Samsung is supplying other customers, and the HBM market is expanding enough for both Korean suppliers to play major roles.
Kim Rok-ho Team Leader, Hana Securities Research Center 9:59
New memory capex lifts equipment selectively
Memory capex is shifting from conversion investment to new fab investment, with Samsung's P4 DRAM expansion and SK hynix's M15X HBM line. New investment requires buying all equipment and can have two to three times the revenue impact of conversion spending, benefiting equipment and materials suppliers. However, after the broad recent rally, some equipment names now have valuation burdens and some show a divergence between earnings and share prices, so selectivity is needed.
Kim Rok-ho Team Leader, Hana Securities Research Center 15:28
AI inference drives structural server DRAM demand
AI inference is spreading widely and processing text, images, and video, causing data to grow exponentially. Because GPU and HBM capacity is used for generation, validation and less critical data are being pushed into conventional server DRAM. This is driving a surge in server DRAM demand that may prove structural rather than merely cyclical.
Up Next

This 3PRO TV (삼프로TV) video, published February 04, 2026, features Kim Rok-ho discussing SMH, HBM, 000660.KS, 005930.KS, Korean semiconductor equipment and materials, Server DRAM. 4 trade ideas extracted by AI with direction and confidence scoring.

Speakers: Kim Rok-ho  · Tickers: SMH, HBM, 000660.KS, 005930.KS, Korean semiconductor equipment and materials, Server DRAM