Samsung Developing 8-Layer HBM4E Custom-Built for Nvidia, Targeting Transfer Speeds Up to 18Gbps

Samsung Electronics is developing an 8-layer stacked HBM4E memory chip at Nvidia's request, targeting transfer speeds of 17 to 18Gbps; roughly 20% higher than its current samples. The product is slated for Nvidia's custom memory platform, NVHBM, and is expected to be integrated into the Rubin Ultra AI GPU launching next year. The 8-layer architecture reflects a broader shift in AI chip design away from pure capacity expansion toward a balanced optimization of bandwidth, power consumption, and yield. Samsung, with its integrated capability to produce both DRAM and logic-based base dies, is viewed as holding a competitive edge over SK Hynix and Micron in the custom HBM market. If the product passes validation, it could help Samsung narrow the gap with SK Hynix in the high-end HBM segment. https://finance.biggo.com/news/95b3d9eb-7477-4170-a9a2-5dfc3d46febb